Methods of making a semiconductor device

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United States of America Patent

PATENT NO 8329562
SERIAL NO

12965706

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Abstract

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Various embodiments of the present invention include a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.

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Patent Owner(s)

Patent OwnerAddress
VALLEY DEVICE MANAGEMENT1209 ORANGE STREET CORPORATION TRUST CENTER WILMINGTON DE 19801

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Meguro, Kouichi Tokyo, JP 43 349
Onodera, Masanori Tokyo, JP 73 1778
Tanaka, Junji Tokyo, JP 85 750

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