Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor
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United States of America Patent
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Dec 11, 2012
Grant Date -
Nov 24, 2011
app pub date -
Jul 31, 2011
filing date -
Jan 24, 2007
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Abstract
A method is described for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, which comprises the steps of supplying original species SiH4 and CCl4 into a growth chamber, decomposing at elevated temperatures, producing decomposition product SiH2, SiH, Si, CCl3, or CCl2, producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2, etching by one of the byproducts HCl to suppress Si nucleation, providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of the substrate holder, in the growth chamber, with proper Si to C atom ratio and Si to Cl atom ratio, to suppress parasitic deposits, and depositing SiC on a substrate at a proper growth substrate temperature (1500 to 1800 centigrade range).
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