Semiconductor device, electrode member and electrode member fabrication method
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United States of America Patent
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Dec 4, 2012
Grant Date -
Aug 31, 2006
app pub date -
Feb 10, 2006
filing date -
Feb 28, 2005
priority date (Note) -
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Abstract
A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.
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