Method of producing a semiconductor device with an aluminum or aluminum alloy electrode
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United States of America Patent
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Dec 4, 2012
Grant Date -
Apr 14, 2011
app pub date -
Dec 17, 2010
filing date -
Jun 20, 2005
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Abstract
A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 μm.
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