Plasma reactor and etching method using the same
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United States of America Patent
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Dec 4, 2012
Grant Date -
Jun 30, 2011
app pub date -
Nov 18, 2010
filing date -
Dec 24, 2009
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Abstract
A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.
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