Dual ported non volatile FIFO with third dimension memory

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United States of America Patent

PATENT NO 8320179
APP PUB NO 20120063200A1
SERIAL NO

13302990

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Abstract

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A FIFO with data storage implemented with non-volatile third dimension memory cells is disclosed. The non-volatile third dimension memory cells can be fabricated BEOL on top of a substrate that includes FEOL fabricated active circuitry configured for data operations on the BEOL memory cells. Other components of the FIFO that require non-volatile data storage can also be implemented as registers or the like using the BEOL non-volatile third dimension memory cells so that power to the FIFO can be cycled and data is retained. The BEOL non-volatile third dimension memory cells can be configured in a single layer of memory or in multiple layers of memory. An IC that includes the FIFO can also include one or more other memory types that are emulated using the BEOL non-volatile third dimension memory cells and associated FEOL circuitry configured for data operations on those memory cells.

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Patent Owner(s)

Patent OwnerAddress
UNITY SEMICONDUCTOR CORPORATION1050 ENTERPRISE WAY #700 C/O RAMBUS INC SUNNYVALE CA 94089

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Norman, Robert Pendleton, US 134 2485

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