Method of fabricating an integrated device

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United States of America Patent

PATENT NO 8320038
APP PUB NO 20100149625A1
SERIAL NO

12639899

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Abstract

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A method of fabricating an integrated device including a MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In one embodiment, the method comprises: forming a high temperature capable contact through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the contact and a bottom electrode for the adjacent MEMS structure. Other embodiments are also provided.

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Patent Owner(s)

Patent OwnerAddress
SILICON LIGHT MACHINES CORPORATION820 KIFER ROAD SUNNYVALE CA 94086

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beach, Gregory Round Rock, US 5 31
Hunter, James Campbell, US 52 674
Lu, Joshua Austin, US 3 20
Payne, Alexander Ben Lomand, US 37 225

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