Manufacturing method of semiconductor device including Au bump on seed film

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United States of America Patent

PATENT NO 8318597
APP PUB NO 20100330796A1
SERIAL NO

12801245

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Abstract

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The manufacturing method includes: forming a seed film on a semiconductor chip; forming a photoresist having an opening above an electrode of the semiconductor chip on the seed film; forming a first Au bump on the seed film in the opening by electrolytic plating with a current density of 1.5 A/dm2 or above; grinding a surface of the first Au bump; stripping the photoresist; and removing the seed film by dry-etching.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATION2-24 TOYOSU 3-CHOME KOTO-KU TOKYO 135-0061

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okaji, Shigeharu Shiga, JP 4 13

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