Growth methodology for light emitting semiconductor devices
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United States of America Patent
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Nov 27, 2012
Grant Date -
Jun 9, 2011
app pub date -
Dec 8, 2009
filing date -
Dec 8, 2009
priority date (Note) -
Expired
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Abstract
A method of manufacturing an optoelectronic light emitting semiconductor device is provided where a Multi-quantum Well (MQW) subassembly is subjected to reduced temperature vapor deposition processing to form one or more of n-type or p-type layers over the MQW subassembly utilizing a plurality of precursors and an indium surfactant. The precursors and the indium surfactant are introduced into the vapor deposition process at respective flow rates with the aid of one or more carrier gases, at least one of which comprises H2. The indium surfactant comprises an amount of indium sufficient to improve crystal quality of the p-type layers formed during the reduced temperature vapor deposition processing and the respective precursor flow rates and the H2 content of the carrier gas are selected to maintain a mole fraction of indium from the indium surfactant to be less than approximately 1% in the n-type or p-type layers. In another embodiment, the reduced temperature vapor deposition processing is executed at a reduced temperature TG, where TG≦TB±5% and TB is the MQW barrier layer growth temperature. Additional embodiments are disclosed and claimed.
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