Enhancement mode semiconductor device
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United States of America Patent
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Nov 13, 2012
Grant Date -
Jan 21, 2010
app pub date -
Jul 14, 2009
filing date -
Jul 15, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device is disclosed. In one aspect, the device has a first and second active layer on a substrate, the second active layer having a higher bandgap than the first active layer, being substantially Ga-free and including at least Al. The device has a gate insulating layer on a part of the second active layer formed by thermal oxidation of a part of the second active layer. The device has a gate electrode on at least a part of the gate insulating layer and a source electrode and drain electrode on the second active layer. The device has, when in operation and when the gate and source electrode are at the same voltage, a two-dimensional electron gas layer between the first and second active layer only outside the location of the gate electrode and not at the location of the gate electrode.
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