Method of improving thermoelectric figure of merit of high efficiency thermoelectric materials
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United States of America Patent
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Nov 13, 2012
Grant Date -
Nov 3, 2005
app pub date -
Apr 30, 2004
filing date -
Apr 30, 2004
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Abstract
A method of improving the thermoelectric figure of merit (ZT) of a high-efficiency thermoelectric material is disclosed. The method includes the addition of fullerene (C60) clusters between the crystal grains of the material. It has been found that the lattice thermal conductivity (κL) of a thermoelectric material decreases with increasing fullerene concentration, due to enhanced phonon-large defect scattering. The resulting power factor (S2/ρ) decrease of the material is offset by the lattice thermal conductivity reduction, leading to enhanced ZT values at temperatures of between 350 degrees K and 700 degrees K.
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