Device for the temperature control of the surface temperatures of substrates in a CVD reactor
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United States of America Patent
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Nov 13, 2012
Grant Date -
Jul 8, 2010
app pub date -
Jun 3, 2008
filing date -
Jun 6, 2007
priority date (Note) -
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Abstract
The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.
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