Semiconductor memory with memory cell portions having different access speeds

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United States of America Patent

PATENT NO 8305834
APP PUB NO 20110205828A1
SERIAL NO

12710800

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.

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Patent Owner(s)

Patent OwnerAddress
POLARIS INNOVATIONS LIMITED29 EARLSFORT TERRACE DUBLIN 2 DUBLIN

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balb, Markus Unterhaching, DE 28 310
Bilger, Christoph München, DE 30 582
Brox, Martin Munich, DE 147 730
Gregorius, Peter Munich, DE 92 1276
Hein, Thomas Munich, DE 157 1343
Richter, Michael Ottobrunn, DE 101 1631
Schneider, Andreas Gernlinden, DE 119 1371

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