Metal oxide materials and electrodes for Re-RAM
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United States of America Patent
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Nov 6, 2012
Grant Date -
May 13, 2010
app pub date -
Feb 3, 2009
filing date -
Nov 12, 2008
priority date (Note) -
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Abstract
Rewritable switching materials and methods for forming the same are described herein. One embodiment is a storage device comprising a first electrode, a state change element in contact with the first electrode, the state change element comprises ZrxYyOz, and a second electrode in contact with the state change element. A method for forming such a storage device is also disclosed herein. Another embodiment is a storage device comprising a first electrode a state change element in contact with the first electrode, the state change comprises at least one of cerium oxide or bismuth oxide, and a second electrode in contact with the state change element. A method for forming such a storage device is also disclosed herein.
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