High throughput chemical mechanical polishing composition for metal film planarization
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United States of America Patent
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Nov 6, 2012
Grant Date -
Oct 16, 2008
app pub date -
Feb 5, 2008
filing date -
Aug 5, 2005
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Expired
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Abstract
A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.
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