Cost saving electrically-erasable-programmable read-only memory (EEPROM) array

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United States of America Patent

PATENT NO 8300469
APP PUB NO 20120039129A1
SERIAL NO

12854407

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Abstract

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A cost saving EEPROM array, having: a plurality of parallel bit lines, a plurality of parallel word lines, and a plurality of parallel common source lines. The bit lines contain a first group bit lines; the word line includes a first and a second word lines; and the common source line includes a first common source line. And, a plurality of sub-memory arrays are provided. Each sub-memory array includes a first and a second memory cells disposed opposite to each other and located on two different sides of the first common source line; the first memory cell is connected to the first group bit lines, the first common source line, and the first word line, and the second memory cell is connected to the first group bit line, the first common source line, and the second word line.

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Patent Owner(s)

Patent OwnerAddress
YIELD MICROELECTRONICS CORP7F-2 NO 28 TAI YUEN ST CHU-PEI CITY HSIN-CHU COUNTY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fan, Ya-Ting Hsinchu County, TW 12 22
Lin, Hsin Chang Hsinchu County, TW 15 102
Tai, Chia-Hao Hsinchu County, TW 7 16
Yang, Ming-Tsang Hsinchu County, TW 7 75
Yen, Yang-Sen Hsinchu County, TW 4 14

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