Nonvolatile memory device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8300460
APP PUB NO 20100329008A1
SERIAL NO

12826570

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Abstract

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A nonvolatile memory device comprises a page buffer unit comprising page buffers, each coupling first and second input and output (IO) lines and a latch circuit for outputting data together or coupling a sense node and the first or second I/O line together, in response to an operation mode; a Y decoder unit comprising decoders, each selecting one or more of the page buffers in response to address signals and outputting a first or second control signal to the selected page buffers in response to the operation mode; a mode selection unit outputting first and second operation selection signals for selecting the operation mode; and an I/O control unit comprising I/O control circuits, each detecting data, inputted and output through the first and second I/O lines, and outputting the detected data or coupling one of the first and second I/O lines to a data line.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Ho Youb Seoul, KR 23 179

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