Transistor and method thereof
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United States of America Patent
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Oct 30, 2012
Grant Date -
Jun 30, 2011
app pub date -
Dec 31, 2009
filing date -
Dec 31, 2009
priority date (Note) -
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Abstract
An electronic device can include a first well region of a first conductivity-type and a second well region of a second conductivity-type and abutting the first well region. The first conductivity-type and the second conductivity type can be opposite conductivity types. In an embodiment, an insulator region can extend into the first well region, wherein the insulator region and the first well region abut and define an interface, and, from a top view, the insulator region can include a first feature extending toward the first interface, and the insulator region can define a first space bounded by the first feature, wherein a dimension from a portion of the first feature closest to the first interface is at least zero. A gate structure can overlie an interface between the first and second well regions.
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