Semiconductor device and bypass capacitor module
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United States of America Patent
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Oct 30, 2012
Grant Date -
Oct 27, 2011
app pub date -
Jul 5, 2011
filing date -
Mar 17, 2008
priority date (Note) -
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Abstract
A semiconductor device includes an Si substrate having a first surface provided with semiconductor elements, such as a CMOS transistor and a diode, and a second surface opposite to the first surface. On one of the first and the second surfaces, a bypass capacitor is formed. The bypass capacitor includes a Vcc power supply layer and a GND layer which serve to supply a power supply voltage to the semiconductor element, and a high dielectric constant layer sandwiched between the Vcc power supply layer and the GND layer.
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