Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method
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United States of America Patent
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Oct 30, 2012
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Feb 18, 2010
app pub date -
Dec 27, 2007
filing date -
Dec 29, 2006
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Abstract
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.
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