Importance

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Abstract

Disclosed is an apparatus for chemical vapor deposition (CVD) with a showerhead through which a source material gas is injected over a substrate to deposit a film on the substrate. The showerhead includes: a plurality of reactive gas showerhead modules having the same number as the kind of reactive gases of the source material gas, each reactive gas showerhead module having inner spaces separated from each other and a plurality of reactive gas flow channels formed on the bottom surface thereof for supplying the reactive gas over the substrate; and a purge gas showerhead module mounted under the reactive gas showerhead modules, having a purge gas supply port for introducing a purge gas of the source material gas thereto, an inner space separated from inner spaces of the reactive gas showerhead modules for being filled with the purge gas only, a plurality of inlets formed on the upper surface thereof for allowing a penetration of the said reactive gas flow channels through the inner space thereof with hermetic sealing at the joints of the said inlets, a plurality of exits for said reactive gas flow channels and a plurality of exits for said purge gas formed on the bottom surface thereof, and said exit for purging gas having a diameter smaller than that of said exit for the reactive gas flow channel, and wherein each reactive gas flow channel of each reactive gas showerhead module placed at upper positions passes through the inside of the other reactive gas showerhead modules placed at lower positions and through the inside of the purge gas showerhead module.

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First Claim