Semiconductor device having an enlarged emitter electrode
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United States of America Patent
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Oct 23, 2012
Grant Date -
Mar 3, 2011
app pub date -
Mar 11, 2010
filing date -
Aug 27, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device comprises: a semiconductor substrate; a plurality of IGBT cells on the semiconductor substrate, each of the IGBT cells including a gate electrode and a first emitter electrode; a first gate wiring on the substrate and being connected to the gate electrode; an interlayer insulating film covering the first emitter electrode and the first gate wiring; and a second emitter electrode on the interlayer insulating film and being connected to the first emitter electrode through an opening of the interlayer insulating film, wherein the second emitter electrode extends above the first gate wiring via the interlayer insulating film.
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