CIGS solar cell having thermal expansion buffer layer and method for fabricating the same
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United States of America Patent
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Oct 23, 2012
Grant Date -
May 19, 2011
app pub date -
Jan 26, 2011
filing date -
Mar 19, 2009
priority date (Note) -
Expired
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Abstract
A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu2S) or cuprous selenide (Cu2Se) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.
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