Process for forming the strontium-containing thin film
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United States of America Patent
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Oct 23, 2012
Grant Date -
Jan 1, 2009
app pub date -
Jun 25, 2008
filing date -
Jun 26, 2007
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Abstract
The present invention provides a process for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production. bis(propyltetramethylcyclopentadienyl)strontium is used as an Sr source to form a strontium-containing thin film such as a SrTiO3 film, a (Ba, Sr)TiO3 film by chemical vapor deposition or atomic layer deposition.
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