Fabrication method of semiconductor integrated circuit device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8292159
APP PUB NO 20120058603A1
SERIAL NO

13295336

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
RENESAS ELETRONICS CORPORATIONTOKYO

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Maki, Hiroshi Ryuou, JP 56 509
Tani, Yukio Ryuou, JP 38 121

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation