Semiconductor devices having gallium nitride epilayers on diamond substrates
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United States of America Patent
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Oct 9, 2012
Grant Date -
Jan 7, 2010
app pub date -
Jun 12, 2009
filing date -
Apr 13, 2005
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Abstract
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
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