Thin film dielectrics with perovskite structure and preparation thereof
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United States of America Patent
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Oct 2, 2012
Grant Date -
Dec 20, 2007
app pub date -
Aug 30, 2007
filing date -
Aug 14, 2003
priority date (Note) -
Expired
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Abstract
Methods of making a ternary oxide and a perovskite-related ternary oxide structure are described. The methods include reacting a binary oxide with a metal oxide or a metal hydroxide to form a ternary oxide dielectric layer on a substrate. Powders, anodes, pressed articles, and capacitors including the ternary oxide or perovskite-related ternary oxide structure as a dielectric layer or other layers are further described.
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