CVD apparatus and method of cleaning the CVD apparatus
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United States of America Patent
Stats
-
Oct 2, 2012
Grant Date -
Dec 16, 2004
app pub date -
Mar 19, 2003
filing date -
Mar 27, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.
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- 1 Citation Count
- C23C Class
- 4.98 % this patent is cited more than
- 13 Age
