Silicon thin film deposition for photovoltaic device applications

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United States of America Patent

PATENT NO 8273595
APP PUB NO 20100255627A1
SERIAL NO

12755712

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Abstract

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The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi-junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as “value-added” products.

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Patent Owner(s)

Patent OwnerAddress
AGC FLAT GLASS NORTH AMERICA INC11175 CICERO DRIVE SUITE 400 ALPHARETTA GA 30022-1167
ASAHI GLASS CO LTDTOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cording, Christopher R Kingsport, US 10 190
Masumo, Kunio Zama, JP 11 344
Spencer, Matthew Gray, US 37 117

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