MOS gate power semiconductor device with anode of protection diode connected to collector electrode
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United States of America Patent
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Sep 18, 2012
Grant Date -
Mar 17, 2011
app pub date -
Feb 12, 2010
filing date -
Sep 11, 2009
priority date (Note) -
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Abstract
A MOS-gate power semiconductor device includes: a main device area including an active area and an edge termination area; and an auxiliary device area horizontally formed outside the main device area so as to include one or more diodes. Accordingly, it is possible to protect a circuit from an overcurrent and thus to prevent deterioration and/or destruction of a device due to the overcurrent.
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