Trench capacitor for high voltage processes and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 18, 2012
Issued Date -
N/A
app pub date -
Jul 14, 2008
filing date -
Jul 14, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides embodiments of a capacitor and a method of forming the capacitor. The capacitor includes one or more trenches formed in a semiconductor layer above a substrate. The trench includes dielectric material deposited on the trench walls and a conductive fill material formed within the trench and above the dielectric material. The capacitor also includes one or more first doped regions formed adjacent the trench(es) in the semiconductor layer. The first doped region is doped with a first type of dopant. The capacitor further includes one or more second doped regions formed adjacent the first doped region(s) in the semiconductor layer. The second doped regions are doped with a second type of dopant that is opposite to the first type of dopant.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully