Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface

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United States of America Patent

PATENT NO 8268735
APP PUB NO 20090023231A1
SERIAL NO

12223385

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Abstract

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Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.

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Patent Owner(s)

Patent OwnerAddress
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE586-9 USHIGAFUCHI AKATSUKA TSUKUBA-CITY IBARAKI PREFECTURE 305-0062
TOHOKU UNIVERSITYMIYAGI PREFECTURE JAPAN MIYAGI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Morinaga, Hitoshi Miyagi, JP 68 521
Ohmi, Tadahiro Miyagi, JP 798 14083

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