Method for fabricating a radiation hardened device
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United States of America Patent
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Sep 18, 2012
Grant Date -
Dec 23, 2010
app pub date -
Aug 25, 2010
filing date -
Aug 13, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A “tabbed” MOS device provides radiation hardness while supporting reduced gate width requirements. The “tabbed” MOS device also utilizes a body tie ring, which reduces field threshold leakage. In one implementation the “tabbed” MOS device is designed such that a width of the tab is based on at least a channel length of the MOS device such that a radiation-induced parasitic conduction path between the source and drain region of the device has a resistance that is higher than the device channel resistance.
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