Importance

Loading Importance Indicators...

Abstract

A method for processing a photomask for semiconductor devices. The method includes providing a partially completed mask structure, which has a backside and a face. The face includes a substrate material, a light blocking layer overlying the substrate material, and an overlying patterned photoresist layer overlying the light blocking layer. The method includes supporting the backside of the mask structure to maintain the mask structure in place and maintaining the face of the patterned photoresist layer in a direction parallel to a gravitational force and toward the gravitational force. The method includes rotating the mask structure in an annular manner as the patterned photoresist layer of the mask structure is being maintained in the direction parallel to the gravitational force and toward the gravitational force. Additionally, the method includes applying cleaning fluid on the patterned photoresist layer as the patterned photoresist layer of the mask structure is being maintained in the direction parallel to gravity, is facing the gravitational force, and is being rotated to remove one or more particles from the patterned surface. Preferably, the method includes accelerating the one or more particles away from the surface of the patterned photoresist layer, whereupon the one or more particles are prevented from attaching themselves back to the patterned photoresist layer via the gravitational force.

Loading the Abstract Image...

First Claim