Self-timed write boost for SRAM cell with self mode control
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United States of America Patent
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Sep 4, 2012
Grant Date -
Feb 3, 2011
app pub date -
Sep 30, 2009
filing date -
Aug 3, 2009
priority date (Note) -
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Abstract
A write boost circuit provides an automatic mode control for boost with different modalities with respect to the external supply voltage and also with respect to the extent of boost required at different process corners. The write boost circuit also takes care of the minimum boost provided to process corners with good writability where less boost is required. The boost is realized in terms of ground raising in the particular context and in general applicable to all other methods.
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