TMR device with novel free layer structure

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United States of America Patent

PATENT NO 8259420
APP PUB NO 20110188157A1
SERIAL NO

12658005

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Abstract

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A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.

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Patent Owner(s)

Patent OwnerAddress
HEADWAY TECHNOLOGIES INC682 S HILLVIEW DRIVE MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Min Dublin, US 751 7676
Wang, Hui Chuan Pleasanton, US 19 139
Zhang, Kunliang Fremont, US 146 3314
Zhao, Tong Fremont, US 226 3549

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