Light emitting diode device having uniform current distribution
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United States of America Patent
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Sep 4, 2012
Grant Date -
Aug 11, 2011
app pub date -
Apr 20, 2011
filing date -
Apr 10, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Embodiments of the present disclosure relate to a novel semiconductor. In one aspect, the semiconductor may include a transparent layer having a first surface, a first doped layer, a second doped layer, and an active layer. The first doped layer may be formed over the first surface of the transparent layer and have a plurality of first-type electrodes formed thereon. The second doped layer may be formed over the first surface of the transparent layer and have a plurality of second-type electrodes formed thereon. The active layer may be formed between the first doped layer and the second doped layer. A distance between at least one of the first-type electrodes and a nearest other one of the first-type electrodes may be greater than each of respective distances between the at least one of the first-type electrodes and more than two of the second-type electrodes.
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