Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer
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United States of America Patent
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Sep 4, 2012
Grant Date -
May 5, 2011
app pub date -
Oct 22, 2010
filing date -
Oct 29, 2009
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Abstract
Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure.
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