Semiconductor sensor structures with reduced dislocation defect densities
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United States of America Patent
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Aug 28, 2012
Grant Date -
Apr 1, 2010
app pub date -
Sep 24, 2009
filing date -
Sep 24, 2008
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Abstract
Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
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