Phase-change memory device
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United States of America Patent
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Aug 21, 2012
Grant Date -
May 3, 2012
app pub date -
Jan 10, 2012
filing date -
Sep 26, 2006
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Abstract
A phase-change memory device and its firing method are provided. The firing method of the phase-change memory device includes applying a writing current to phase-change memory cells, identifying a state of the phase-change memory cells after applying the writing current, and applying a firing current, in which an additional current is added to the writing current, to the phase-change memory cells in accordance with the state.
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