Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
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United States of America Patent
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Aug 21, 2012
Grant Date -
Jul 9, 2009
app pub date -
Jan 5, 2009
filing date -
Jul 7, 2004
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Abstract
Use of a forward biased diode to reduce leakage current of transistors implemented on silicon on insulator (SOI) is a particular challenge due to the difficulty of achieving effective contact with the region beneath the gate of the transistor. An improved implementation in SOI gate fingers that reach under the source through tunnels that are contacted with a region outside the transistor. A further embodiment uses drain extension implants to provide good channel connection.
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