Single crystal silicon carbide nanowire, method of preparation thereof, and filter comprising the same

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United States of America Patent

PATENT NO 8246743
APP PUB NO 20100293910A1
SERIAL NO

11919809

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.

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Patent Owner(s)

Patent OwnerAddress
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)SEOUL 04763

International Classification(s)

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  • 2007 Application Filing Year
  • C30B Class
  • 274 Applications Filed
  • 185 Patents Issued To-Date
  • 67.52 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2007200820092010201120122013201420152016201720180255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Byeun, Yun-Ki Seoul, KR 2 10
Choi, Sung-Churl Seoul, KR 1 0
Lee, Jin-Seok Seoul, KR 70 549
Lee, Sang-Hoon Seoul, KR 393 4966

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  • 0 Citation Count
  • C30B Class
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  • 13 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1916037169225112301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0102030405060708090100110120130140150160170

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