Method of forming metal interconnection on thick polyimide film
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United States of America Patent
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Aug 14, 2012
Grant Date -
Mar 24, 2011
app pub date -
Sep 18, 2009
filing date -
Sep 18, 2009
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Abstract
Many current micromachining devices are integrated with materials such as very thick layer of polyimide (10 to 100 um) to offer essential characteristics and properties for various applications; it is inherently difficult and complicated to provide reliable metal interconnections between different levels of the circuits. The present invention is generally related to a novel micromachining process and structure to form metal interconnections in integrated circuits or micromachining devices which are incorporated with thick polyimide films. More particularly, the embodiments of the current invention relates to formation of multi-step staircase structure with tapered angle on polyimide layer, which is therefore capable of offering superb and reliable step coverage for metallization among different levels of integrated circuits, and especially for very thick polyimide layer applications.
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