Method of producing a semiconductor device having a trench filled with an epitaxially grown semiconductor layer
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United States of America Patent
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Aug 14, 2012
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app pub date -
Dec 14, 2010
filing date -
Aug 1, 2008
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Abstract
A method of producing a device includes embedding trenches with an epitaxial layer having high crystallinity while a mask oxide film remains unremoved. An n-type semiconductor is formed on the surface of a silicon substrate, and a mask oxide film and a mask nitride film are formed on the surface of the n-type semiconductor. The mask laminated film is opened by photolithography and etching, and trenches are formed in the silicon substrate. The width of the remaining mask laminated film is narrowed and portions of the n-type semiconductor close to the opening ends of the trenches are exposed. The trenches are embedded with a p-type semiconductor and the surface of the mask laminated film is prevented from being covered with the p-type semiconductor. The p-type semiconductor is grown from the second exposed portions of the n-type semiconductor. V-shaped grooves are prevented from forming on the surface of the p-type semiconductor.
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