Semiconductor device formed using single polysilicon process and method of fabricating the same

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United States of America Patent

PATENT NO 8242007
APP PUB NO 20090230481A1
SERIAL NO

12401693

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Abstract

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Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming a gate insulating layer on a part of an active region on a first conductivity type epitaxial layer; forming a conductive layer on the epitaxial layer; implanting high concentration impurities of a second conductivity type a first portion of the conductive layer on the gate insulating layer and second portions of the conductive layer on both sides of the first insulating layer; patterning the conductive layer; forming a second insulating layer on the epitaxial layer and high concentration impurity regions of the second conductivity type below the second conductive pattern; and implanting low-concentration impurities of the second conductivity type into the epitaxial layer between a gate structure and the high concentration impurity regions.

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Patent Owner(s)

Patent OwnerAddress
FAIRCHILD KOREA SEMICONDUCTOR LTD82-3 DODANG-DONG WOMNI-GU GYEONGGI-DO BUCHEON-SI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeon, Chang-ki Gimpo-si, KR 32 421
Park, Hyi-jeong Seoul, KR 4 5
Park, Jong-ho Incheon, KR 110 1095

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