Zinc oxide-based conductor

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United States of America Patent

PATENT NO 8241531
APP PUB NO 20110001095A1
SERIAL NO

12824922

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Abstract

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A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG CORNING ADVANCED GLASS LLCTANGJEONG-MYEON ASAN-SI CHUNGCHEONGNAM-DO 336-725

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jung, Sang Cheol ChungCheongNam-Do, KR 10 28
Lee, Yoon Gyu ChungCheongNam-Do, KR 12 77
You, Yil Hwan ChungCheongNam-Do, KR 2 9
Yu, Tae Hwan ChungCheongNam-Do, KR 8 28

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