Relaxor-PT ferroelectric single crystals
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United States of America Patent
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Aug 14, 2012
Grant Date -
Jan 27, 2011
app pub date -
Mar 16, 2010
filing date -
Mar 17, 2009
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Abstract
A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.
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