Contact patterning method with transition etch feedback
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United States of America Patent
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Aug 7, 2012
Grant Date -
Jul 28, 2011
app pub date -
Feb 7, 2011
filing date -
Oct 31, 2008
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Abstract
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
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