Method of passivating chemical mechanical polishing compositions for copper film planarization processes
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United States of America Patent
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Aug 7, 2012
Grant Date -
May 28, 2009
app pub date -
Sep 19, 2008
filing date -
Dec 10, 2002
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Abstract
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
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