Semiconductor substrate with AlGaN formed thereon and semiconductor device using the same
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United States of America Patent
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Jul 31, 2012
Grant Date -
Sep 4, 2008
app pub date -
Dec 27, 2007
filing date -
Dec 27, 2006
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Abstract
A semiconductor substrate includes: an AlN layer provided on a silicon substrate; an AlGaN layer that is provided on the AlN layer and has an Al composition ratio of 0.3 to 0.6; and a GaN layer provided on the AlGaN layer.
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